vishay siliconix DG2616, dg2617, dg2618 document number: 74411 s-82149-rev. b, 08-sep-08 www.vishay.com 1 low voltage, dual spdt analog switch with charge pump features ? low voltage operation (1.5 v to 3.6 v) ? low on-resistance - r on : 4.2 typ. at 2.7 v ? fast switching: t on = 39 ns t off = 8 ns ? dfn-10 package benefits ? reduced power consumption ? high accuracy ? reduce board space ? ttl/1.8 v logic compatible ? high bandwidth applications ? cellular phones ? audio and video signal routing ? pcmcia cards ? battery operated systems description the DG2616, dg2617, dg2618 are monolithic cmos analog switching products designed for high performance switching of analog signals. combining low power, high speed, low on-resistance and small physical size, the DG2616, dg2617, dg2618 are ideal for portable and battery powered applications. the DG2616, dg2617, dg2618 have built-in charge-pump circuitry which lowers the minimum supply voltage to + 1.5 v while maintaining low on-resistance. the control circuitry allows the DG2616, dg2617, dg2618 to operate in different configurations. built on vishay siliconix's lo w voltage process, the DG2616, dg2617, dg2618 has an epitaxi al layer that prevents latch-up. break-before-make is guaranteed. the DG2616, dg2617, dg2618 ar e manufactured in space saving dfn-10 (3.0 x 3.0 mm). and as a committed partner to the community and the environment, vishay siliconix manufactures this product with lead (pb)-free device terminations and is 100 % rohs compliant. functional block diagram and pin configuration truth table DG2616 logic nc1, 2 no1, 2 0onoff 1offon truth table dg2617 shdn/en logic in logic nc1, 2 no1, 2 charge pump 0 0 on off on 01offonon 1 0 on off off 11offonoff truth table dg2618 shdn/en logic in logic nc1, 2 no1, 2 charge pump 0 0 on off on 01offonon 1xoffoffoff ordering information temp. range package part number - 40 c to 85 c dfn-10 DG2616dn-t1-e4 dg2617dn-t1-e4 dg2618dn-t1-e4 rohs compliant
www.vishay.com 2 document number: 74411 s-82149-rev. b, 08-sep-08 vishay siliconix DG2616, dg2617, dg2618 notes: a. signals on nc, no, or com or in exceeding v+ will be clamped by in ternal diodes. limit forward di ode current to maximum curre nt ratings. b. all leads welded or soldered to pc board. c. derate 14.9 mw/c above 70 c d. manual soldering with iron is not reco mmended for leadless components. the dfn-10 is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. a solder fillet at the exposed copper lip cannot be guaranteed and is not required to ensure adequat e bottom side solder interconnection. absolute maximum ratings t a = 25 c, unless otherwise noted parameter limit unit reference to gnd v+ - 0.3 to 6.0 v in, com, nc, no a - 0.3 to (v+ + 0.3) current (any terminal except no, nc or com) 30 ma continuous current (no, nc, or com) 150 peak current (pulsed at 1 ms, 10 % duty cycle) 300 storage temperature (d-suffix) - 65 to 150 c package solder reflow conditions d power dissipation (packages) b dfn-10 c 1191 mw i n 1 i n 2 g n d com1 com2 n o2 n c2 v + n o1 n c1 i n 1 shd n /e n g n d com1 com2 n o2 n c2 v + n o1 n c1 DG2616 dg2617/dg261 8 top v ie w top v ie w 1 10 2 3 5 4 6 7 8 9 110 2 3 5 4 6 7 8 9
document number: 74411 s-82149-rev. b, 08-sep-08 www.vishay.com 3 vishay siliconix DG2616, dg2617, dg2618 specifications v+ = 3 v parameter symbol test conditions otherwise unless specified v+ = 3 v, 10 %, v in = 0.5 or 1.4 v e temp. a limits - 40 c to 85 c unit min. b typ. c max. b analog switch analog signal range d v no , v nc , v com full 0 v+ v on-resistance r on v+ = 1.5 v, v com = 1.5 v, i no , i nc = 10 ma room full 5.3 7.0 8.0 v+ = 2.7 v, v com = 1.5 v, i no , i nc = 10 ma room 4.2 7.0 v+ = 2.7 v, v com = 2.7 v, i no , i nc = 10 ma 4.7 full 8.0 v+ = 3.6 v, v com = 3.6 v, i no , i nc = 10 ma room full 5.5 7.0 8.0 r on flatness d r on flatness v+ = 2.7 v, v com = 1.5 v, 2.7 v, i no , i nc = 10 ma room 0.6 2.0 r on match d r on room 0.1 on resistance (shutdown) r shdn v+ = 3.6 v, v com = 1.7 v, i no , i nc = 10 ma room full 15 20 21 switch off leakage current i no(off) , i nc(off) v+ = 3.6 v, v no , v nc = 0.3 v/3.3 v, v com = 3.3 v/0.3 v room full - 2 - 10 2 10 na i com(off) room full - 2 - 10 2 10 channel-on leakage current i com(on) v+ = 3.6 v, v no , v nc = v com = 0.3 v/3.3 v room full - 2 - 10 2 10 digital control input high voltage v inh v+ = 1.5 v full 1.0 v v+ = 2.7 v to 3.6 v 1.4 input low voltage v inl v+ = 1.5 v 0.4 v+ = 2.7 v to 3.6 v 0.5 input capacitance c in full 3.2 pf input current i inl or i inh v in = 0 or v+ full - 1 1 a dynamic characteristics tu r n - o n t i m e t on v+ = 2.7 or 3.6 v, v no or v nc = 1.5 v, r l = 50 , c l = 35 pf room full 39 69 76 ns turn-off time t off room full 939 41 break-before-make time t d full 1 charge injection d q inj c l = 1 nf, v gen = 0 v, r gen = 0 room 7 pc off-isolation d oirr r l = 50 , c l = 5 pf, f = 1 mhz room - 77 db r l = 50 , c l = 5 pf, f = 100 mhz - 32 crosstalk d, f x ta l k r l = 50 , c l = 5 pf, f = 1 mhz - 80 r l = 50 , c l = 5 pf, f = 100 mhz - 32 n o , n c off capacitance d c no(off) f = 1 mhz room 9 pf c nc(off) room 7 channel-on capacitance d c no(on) room 21 c nc(on) room 19
www.vishay.com 4 document number: 74411 s-82149-rev. b, 08-sep-08 vishay siliconix DG2616, dg2617, dg2618 notes: a. room = 25 c, full = as determined by the operating suffix. b. the algebraic convention whereby the most negative value is a minimum and the most pos itive a maximum, is used in this data sheet. c. typical values are for design aid only, not guaranteed nor subject to production testing. d. guarantee by design, not subjected to production test. e. v in = input voltage to perform proper function. f. crosstalk measured between channels. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. parameter symbol test conditions otherwise unless specified v+ = 3 v, 10 %, v in = 0.5 or 1.4 v e temp. a limits - 40 c to 85 c unit min. b typ. c max. b power supply power supply range v+ 1.5 3.6 v power supply current i+ v+ = 3.6 v, v in = 0 or v+, shdn/en = 0 v full 104 300 a v+ = 3.6 v, v in = 0 or v+, shdn/en = v+ 0.1 2 specifications v+ = 3 v
document number: 74411 s-82149-rev. b, 08-sep-08 www.vishay.com 5 vishay siliconix DG2616, dg2617, dg2618 typical characteristics t a = 25 c, unless otherwise noted r on vs. v com and supply voltage r on vs. analog voltage and temperature leakage current vs. temperature 0 1 2 3 4 5 6 7 8 9 10 11 12 13 0 1 2 3 4 5 v + = 4.2 v v + = 5.0 v v + = 2.0 v v + = 2.7 v v + = 3.0 v v + = 3.6 v t = 25 c i n o/ n c = 10 ma v + = 1.2 v v + = 1.5 v v co m - analog v oltage ( v ) ( ) e c n a t s i s e r - n o - r n o 0 1 2 3 4 5 6 7 8 9 10 v + = 3.6 v , i s = 10 ma + 8 5 c + 25 c - 40 c v com - analog v oltage ( v ) ( ) e c n a t s i s e r - n o - r n o 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1 10 100 1000 - 60 - 40 - 20 0 20 40 60 8 0 100 i i v + = 3.6 v i temperat u re (c) ) a p ( t n e r r u c e g a k a e l com(off) n o(off) com(on) r on vs. analog voltage and temperature supply current vs. temperature leakage vs. analog voltage v com - analog v oltage ( v ) ( ) e c n a t s i s e r - n o - r n o 0 1 2 3 4 5 6 7 8 9 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v + = 2.7 v , i s = 10 ma + 8 5 c + 25 c - 40 c 0 50 100 150 200 - 60 - 40 - 20 0 20 40 60 8 0 100 v + = 3.6 v temperat u re (c) ) a ( t n e r r u c y l p p u s - + i - 500 - 400 - 300 - 200 - 100 0 100 200 300 400 500 0.0 0.6 1.2 1. 8 2.4 3.0 3.6 i n o(off) /i n c(off) i com(on) i com(off) v + = 3.6 v v com - analog v oltage ( v ) ) a p ( t n e r r u c e g a k a e l
www.vishay.com 6 document number: 74411 s-82149-rev. b, 08-sep-08 vishay siliconix DG2616, dg2617, dg2618 typical characteristics t a = 25 c, unless otherwise noted switching time vs. temperature switching threshold vs. supply voltage temperat u re (c) t o n , t off - s w itching time (ns) 0 5 10 15 20 25 30 35 40 - 60 - 40 - 20 0 20 40 60 8 0 100 t o n v + = 2.7 v t o n v + = 3.6 v t off v + = 2.7 v t off v + = 3.6 v 0.0 0.5 1.0 1.5 2.0 1 2 3 4 5 6 v + - s u pply v oltage ( v ) h t g n i h c t i w s - ) v ( d l o h s e r v t insertion loss, off-isolation crosstalk vs. frequency charge injection vs. analog voltage fre qu ency (hz) loss, oirr, x talk (db) - 100 - 90 - 8 0 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 10 v + = 2.7 v r l = 50 v + = 2.0 v v + = 3.6 v v + = 2.7 v ) c p ( n o i t c e j n i e g r a h c - q v com - analog v oltage ( v )
document number: 74411 s-82149-rev. b, 08-sep-08 www.vishay.com 7 vishay siliconix DG2616, dg2617, dg2618 test circuits figure 1. switching time switch input c l (includes fixture and stray capacitance) v+ in no or nc c l 35 pf com logic input r l 50 v out gnd v+ 50 % 0 v logic input switch output t on t off logic "1" = switch on logic input waveforms inverted for switches that have the opposite logic sense. 0 v switch output v out v com r l r l r on 0.9 x v out t r 5 ns t f 5 ns v inh v inl = + < < ( ) figure 2. break-before-make interval c l (includes fixture and stray capacitance) nc v no no v nc 0 v logic input switch output v o v nc = v no t r < 5 ns t f < 5 ns 90 % t d t d in com v+ gnd v+ c l 35 pf v o r l 50 v inl v inh figure 3. charge injection off on on in v out v out q = v out x c l c l = 1 nf r gen v out com v in = 0 - v+ in gnd v+ v+ in depends on switch configuration: input polarity determined b y sense of switch. + nc or no v gen
www.vishay.com 8 document number: 74411 s-82149-rev. b, 08-sep-08 vishay siliconix DG2616, dg2617, dg2618 test circuits vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74411 . figure 4. off-isolation in gnd nc or no 0 v, 2.4 v 10 nf com off isolation 20 log v com v no / nc r l analyzer v+ v+ com = figure 5. channel off/on capacitance nc or no f = 1 mhz in com gnd 0 v, 2.4 v meter hp4192a impedance analyzer or equivalent 10 nf v+ v+
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
|
